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INTERACTION OF IONS WITH SOLID SURFACES
División Colisiones Atómicas - Centro Atómico Bariloche
8400 San Carlos de Bariloche, Río Negro, Argentina
Tel: +54 2944 445220 Fax: +54 2944 445299
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Permanent staff
Julio E. GAYONE,
e-mail
Oscar GRIZZI,
e-mail
María Luz MARTIARENA,
e-mail
Victor Hugo PONCE,
e-mail
Esteban A. SANCHEZ,
e-mail
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Research fellows
Lic. Luis M. RODRIGUEZ,
e-mail
Lic. Leonardo F. de FERRARIIS,
e-mail
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Topics of research
We study physical and chemical processes taking place during the
interaction of charged particles with metallic, insulating and semiconducting surfaces.
In particular, we study inelastic processes such as
plasmon excitation, electron emission, charge exchange, and modification of the surface topography
produced by grazing ion-surface collisions of 1 to 100 keV ions with crystallines surfaces.
The elastic scattering of ions is used to study the atomic structure of clean and adsorbate
covered crystalline surfaces, the adsorption kinetics of atoms and molecules
on surfaces, and the mechanisms of thin film growing.
Present studies include:
Modification of surfaces by ion bombardment.
- Preparation of flat surfaces by grazing ion bombardment.
- Surface topography changes (blistering and sputtering) and bulk phase
transformation in alloys.
Electron emission in grazing ion surface collisions.
- Convoy and Auger electron emission on metal and insulator surfaces.
Dependence with surface topography.
- Plasmon excitation (and decay) produced by ion bombardment of surfaces.
- Autoionization of atomic projectiles. Effect of the surface topography
and the adsorption of alkali atoms.
Ion scattering spectroscopy.
- Study of H, O2, K and Cs adsorption on GaAs(110). Determination
of adsorption kinetics, adsorption sites, and surface reconstrution.
- Study of thin film growth on Al, Ag and Au singlecrystalline surfaces.
Selfasembling of organic molecules (alkanethiols). Growing of
metal-insulator(AlF3) interfaces. Determination
of adsorption and desorption kinetics, and their stability with substrate
temperature.
- Charge transfer between noble gas projectiles and clean
and adsorbate covered surfaces (alkali and oxygen on GaAs(110), and AlF3 on Al(111)) .
- Growth of insulating films (AlF3) on GaAs(110) and Al(111).
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Collaborations with other laboratories
Alfredo Tolley
Laboratorio de Metales, CAB-CNEA, S.C. de Bariloche,
Argentina.
- Phase transformation induced by irradiation with ions in b Cu-Zn-Al single crystals
Julio Ferrón, Edith Goldberg y Ricardo Vidal
Laboratorio de Física de Superficies, INTEC-CONICET, Santa Fe,
Argentina.
- Alkali adsorption on semiconductors. Determination of adsorption kinetics
and sites.
- Charge exchange processes in ion-surface collisions.
- Characterization of insulating films grown on semiconductors.
Bárbara Blum y Roberto Salvarezza
INIFTA, Universidad Nacional de La Plata, La Plata, Argentina.
- Adsorption of organic molecules (alkanethiols) on surfaces.
M.S. Gravielle and J. Miraglia.
IAFE, Buenos Aires, Argentina.
- Electron emission in grazing ion-surface collisions.
Vladimir Esaulov, Laurent Guillemot, Sandrine Lacombe
Laboratoire des Collisions Atomiques et Moléculaires, Université de Paris-Sud,
Orsay, France.
- Electron emission in ion-surface collisions. Topographical effects
on autoionization processes.
- Charge exchange processes in collisions of noble and reactive ions
with surfaces (Pd, Ag, Al, Na, Si y MgO).
Raúl Baragiola
Laboratory for Atomic and Surface Physics, University of Virginia, Thornton
Hall, Charlottesville, EE.UU.
- Plasmon excitation induced by ion-surface bombardment.
- Electron emission in ion-surface collisions. Autoionization of projectiles.
Stefano Nannarone
Dipartimento di Ingegneria dei Materiali e dell'Ambiente,
Univertità di Modena e Reggio Emilia (UMRE), Modena, Italy.
- Adsorption of fluorides molecules (CaF2, AlF3)
on metal and semiconductor surfaces (Al, GaAs, Si)
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Experimental facilities
The experimental setup is composed of ion accelerators covering the range from 0.1 to
120 keV and 4 collisions chambers. One of them is a high vacuum chamber
with facilities for ion irradiation. Two chambers work at ultra high vacuum
(UHV) and have facilities for sample cleaning and surface analysis. They are
equipped with a custom made cylindrical mirror
electron and ion energy analyzer, and with time-of-flight (TOF) ion and neutral spectrometers.
A fourth UHV chamber has been recently built to perform simultaneous measurements of electron
and ion emission. In the near future this chamber will be equipped with a rotatable TOF spectrometer, a rotatable
electrostatic energy analyzer, and surface analysis techniques such us low energy electron
difraction (LEED) and Auger electron spectroscopy (AES). An atomic force
microscope (AFM) and a scanning tunneling microscope (STM) working in air is used
to measure the topography of the samples.
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Graduate and postgraduate formation
Gustavo H. Nadal, "Emisión Auger inducida por bombardeo iónico de
superficies" (Auger emission induced by ion bombardment of surfaces)
, Trabajo Especial de Licenciatura, Instituto Balseiro, 1992.
Esteban A. Sánchez, "Efectos de la superficie sobre la emisión de
electrones producida en colisiones ion-sólido" (Surface effects on electron
emission produced in ion-solid collisions)
, Tesis Doctoral, Instituto Balseiro, 1992.
Julio E. Gayone, "Caracterización de superficies monocristalinas mediante espectrometría
de iones reflejados y espectroscopía de electrones Auger. Aplicación a
las superficies GaAs(110)-K" (Characterization of single crystal surfaces
by ion scattering spectrometry and Auger electron spectroscopy. Application
to a GaAs(110)-K surface), Trabajo Especial de Licenciatura, Instituto Balseiro, 1994.
Gonzalo R. Gómez, "Interacción de iones con superficies a incidencia
rasante: emisión electrónica y procesos de intercambio de carga"
(Grazing ion interaction with surfaces: electron emission and charge exchange
processes), Tesis Doctoral, Instituto Balseiro, 1997.
Darío Stacchiola, "Implementación de un espetrómetro de tiempo de vuelo"
(Implementation of time-of-flight spectrometer) ,
Pasantía Externa, 1998.
Pablo A. Vázquez, "Estudio de cambios topográficos en superficies de
Cobre policristalino irradiadas con Ar+ de 15 keV"
(Study of topographical changes induced by 15 keV Ar+ irradiation
of copper surfaces), Pasantía Externa, 1999.
Luciana I. Vergara, "Estudio de formación de películas delgadas de
AlF3 sobre GaAs(110)" (Formation of thin AlF3 films
on GaAs(110) surfaces), Pasantía Externa, 1999.
Julio E. Gayone, "Espectrometría de iones aplicada al estudio de la a
dsorción de H y K en GaAs(110)" (Ion scattering spectrometry applied to
the study of H and K adsorption on GaAs(110)), Tesis Doctoral, Instituto Balseiro, 2000.
Paula N. Abufager, "Estudio de la superficie GaAs(110) por
espectrometría de iones: estructura atómica e intercambio de carga"
(Study of the GaAs(110) surface with ion scattering spectrometry:
atomic structure and charge exchange), Pasantía Externa, 2001.
Gonzalo G. Otero, "Estudio de emisión electrónica y caracterización del
crecimiento de películas delgadas aislantes", Trabajo Especial de Licenciatura, Instituto Balseiro, 2002.
Guillermo P. Acuña, "Estudio de adsorción y desorción de dodecanothiol
sobre una superficie de Ag (111)" (Study of the dodekanethiol adsorption and
desorption from a Ag(111) surface), Pasantía Externa, 2004.
Jorge O. Lugo, "Estudio Teórico-experimental de los procesos de transferencia
de carga en espectroscopías de iones sobre superficies metálicas y aislantes"
(Theoretical and experimental study of charge exchange processes on ion
spectroscopies of metallic and insulating surfaces), Tesis Doctoral, Universidad Nacional de Rosario, 2004.
Luis M. Rodriguez, "Estudio del crecimiento de películas orgánicas en superficies."
(Study of organic thin film growth on surfaces), Trabajo Especial de Licenciatura, 2004.
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Publications
National Publications
International Publications
National Conferences
International Conferences
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This page is maintained by: E.A. Sánchez
Last update: April, 2004